| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IRLZ24NPBF is an N-Channel enhancement-mode power MOSFET built with advanced MOSFET technology. It features a maximum drain-to-source voltage (Vdss) of 55 V and a continuous drain current of 18 A at case temperature (Tc). The device offers a low on-resistance of 60 mOhm maximum at 11 A gate drive of 10 V, enabling efficient switching and conduction.
This MOSFET is optimized for a gate drive voltage range of 4 V to 10 V and has a maximum gate threshold voltage of 2 V at 250 µA. It includes a total gate charge of 15 nC at 5 V and an input capacitance of 480 pF at 25 V drain-source, supporting moderate-speed switching applications. The maximum power dissipation is 45 W at case temperature, and it can operate over a junction temperature range of -55°C to 175°C.
The IRLZ24NPBF is supplied in a through-hole TO-220-3 package with a TO-220AB supplier device package, suitable for manual and wave soldering assembly. Its robust thermal and electrical characteristics make it a versatile choice for power management and switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.51 | $1.51 |
| 50+ | $0.71 | $0.71 |
| 100+ | $0.63 | $0.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 55 V.
The maximum continuous drain current at case temperature (Tc) is 18 A.
The maximum on-resistance (Rds on) is 60 mOhm at a drain current of 11 A and gate-source voltage of 10 V.
The MOSFET is supplied in a through-hole TO-220-3 package with a TO-220AB supplier device package.
The operating junction temperature range is -55°C to 175°C.
The part is marked as RoHS3 Compliant, but this status is unverified and should be confirmed with the manufacturer.