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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRLZ24N is a HEXFET Power MOSFET designed with advanced process technology for low on-resistance and fast switching speeds. It features a Drain-to-Source Breakdown Voltage of 55V and a Continuous Drain Current of 18A at 25°C (TC) with a Gate-to-Source Voltage of 10V. The on-resistance is as low as 0.06 Ohms under specific test conditions.
This MOSFET is available in two package types: the D2Pak surface mount package and the TO-262 through-hole package, making it suitable for various application needs. The operating junction and storage temperature range is from -55°C to +175°C.
Key electrical characteristics include a Gate Threshold Voltage typically at 1V, a maximum Gate-to-Source Voltage of ±16V, and significant avalanche energy ratings. It also provides fast switching characteristics with typical turn-on delay times around 7.1ns and fall times around 29ns.
Ideal for applications requiring efficient power handling and fast response, the IRLZ24N is a reliable component for designers.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the IRLZ24N is 18A at 25°C (TC) with a gate-to-source voltage of 10V.
The IRLZ24N has a Drain-to-Source Breakdown Voltage of 55V.
The typical on-resistance (RDS(on)) for the IRLZ24N is 0.06 Ohms when VGS is 10V and ID is 11A.
The IRLZ24N is available in D2Pak surface mount and TO-262 through-hole packages.
The operating junction and storage temperature range for the IRLZ24N is -55°C to +175°C.