IRLZ14SPBF IRLZ14SPBF is a 60V, 10A N-Channel power MOSFET in a D2PAK surface mount package. It features low on-resistance of 200mOhm and fast switching.
Mfr Part #:

IRLZ14SPBF

Available from 1 distributors
Mfr Name: Vishay
Vishay
IRLZ14SPBF is a 60V, 10A N-Channel power MOSFET in a D2PAK surface mount package. It features low on-resistance of 200mOhm and fast switching.
✓ Total Stock: 200 pcs
$ Price Range: $0.68 - $2.39

IRLZ14SPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
200 pcs
200 pcs On Request 1 On Request On Request On Request On Request On Request

IRLZ14SPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRLZ14SPBF Description

Short technical summary and product information.

The IRLZ14SPBF is an N-Channel power MOSFET manufactured by Vishay Dale. It is designed for surface-mount applications using the D2PAK (TO-263) package. The device offers a drain-source voltage rating of 60V and a continuous drain current of 10A at case temperature 25°C.

 

Key electrical characteristics include a maximum on-resistance of 200mOhm at 6A with a 5V gate drive, a maximum gate threshold voltage of 2V at 250µA, and a total gate charge of 8.4nC. The MOSFET can handle pulsed drain currents up to 40A and has a single pulse avalanche energy rating of 68mJ.

 

The device operates over a junction temperature range of -55°C to 175°C, making it suitable for harsh environments. Power dissipation is rated at 43W at case temperature 25°C and 3.7W at ambient temperature. The D2PAK package provides low internal connection resistance for high current applications.

IRLZ14SPBF Quick Information

Product Type: Power MOSFET - Single
Canonical Name: IRLZ14SPBF N-Channel Power MOSFET 60V 10A D2PAK
Subcategory: N-Channel Power MOSFET

IRLZ14SPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRLZ14SPBF Estimated Pricing

Qty Low High
1+ $2.39 $2.39
10+ $1.33 $1.33
100+ $1.01 $1.01
500+ $0.82 $0.82
1,000+ $0.74 $0.74
2,000+ $0.68 $0.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRLZ14SPBF Features

  • N-Channel power MOSFET for switching applications.
  • 60V drain-source voltage rating.
  • 10A continuous drain current capability.
  • Low 200mOhm on-resistance at 6A 5V.
  • Surface mount D2PAK (TO-263) package.

IRLZ14SPBF Applications

  • Used in power supply circuits.
  • Suitable for motor control applications.
  • Ideal for DC-DC converter designs.
  • Applicable in load switching systems.

IRLZ14SPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRLZ14SPBF?

The drain-source voltage (Vdss) is 60V maximum.

What package does the IRLZ14SPBF come in?

It is available in a D2PAK (TO-263) surface mount package, specifically TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

What is the operating temperature range of the IRLZ14SPBF?

The junction temperature range is -55°C to 175°C.

Is the IRLZ14SPBF RoHS compliant?

The part number IRLZ14SPBF has Pb-free terminations and is listed as RoHS3 compliant, but the compliance status is unverified and low confidence.

What is the continuous drain current rating of the IRLZ14SPBF?

The continuous drain current is 10A at case temperature 25°C.

What is the maximum on-resistance of the IRLZ14SPBF?

The maximum on-resistance (Rds(on)) is 200mOhm at 6A drain current and 5V gate-source voltage.

What is the total gate charge of the IRLZ14SPBF?

The maximum total gate charge (Qg) is 8.4nC at 5V gate-source voltage.

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