IRLZ14PBF N-Channel MOSFET rated for 60V drain-source voltage and 10A continuous drain current. Features low on-resistance of 200mOhm at 6A, 5V gate drive.
Mfr Part #:

IRLZ14PBF

Available from 2 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET rated for 60V drain-source voltage and 10A continuous drain current. Features low on-resistance of 200mOhm at 6A, 5V gate drive.
✓ Total Stock: 11,920 pcs
$ Price Range: $0.62 - $2.32

IRLZ14PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,920 pcs
9920 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request 19+ On Request On Request

IRLZ14PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRLZ14PBF Description

Short technical summary and product information.

The IRLZ14PBF is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for through-hole mounting in a TO-220-3 package (TO-220AB). This device offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 10A at case temperature (Tc). The maximum on-resistance (Rds(on)) is 200mOhm at a gate-source voltage of 5V and drain current of 6A. The gate charge (Qg) is 8.4 nC at 5V, and input capacitance (Ciss) is 400 pF at 25V drain-source voltage. The threshold voltage (Vgs(th)) is 2V maximum at 250µA drain current. The maximum power dissipation is 43W at case temperature. The operating junction temperature range is -55°C to 175°C. This MOSFET is suitable for switching and amplification applications requiring moderate voltage and current handling. The TO-220AB package allows for easy heatsinking and through-hole PCB assembly. The device is listed as RoHS3 compliant and has an MSL of 1 (unlimited), though these compliance statuses are unverified.

IRLZ14PBF Quick Information

Product Type: N-Channel MOSFET
Series: TO-220AB
Canonical Name: IRLZ14PBF N-Channel MOSFET
Subcategory: Single MOSFET

IRLZ14PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRLZ14PBF Estimated Pricing

Qty Low High
1+ $2.32 $2.32
10+ $1.13 $1.13
100+ $1.01 $1.01
500+ $0.80 $0.80
1,000+ $0.74 $0.74
2,000+ $0.68 $0.68
5,000+ $0.62 $0.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRLZ14PBF Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • Continuous drain current rating of 10A.
  • Low on-resistance of 200mOhm at 5V gate drive.
  • Through-hole TO-220AB package for easy mounting.
  • Wide operating temperature range -55°C to 175°C.

IRLZ14PBF Applications

  • Suitable for DC-DC converter circuits.
  • Used in motor control applications.
  • Ideal for power management in embedded systems.
  • Can be used in switching regulator designs.

IRLZ14PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRLZ14PBF?

The maximum drain-to-source voltage (Vdss) is 60V.

What package does the IRLZ14PBF come in?

It is available in a TO-220-3 through-hole package (TO-220AB).

What is the operating temperature range?

The junction temperature range is -55°C to 175°C.

Is the IRLZ14PBF RoHS compliant?

The part is listed as RoHS3 compliant, but this is unverified.

What is the continuous drain current rating?

10A at case temperature.

What is the maximum on-resistance?

200mOhm at 6A drain current and 5V gate-source voltage.

What is the gate charge?

8.4 nC at 5V gate-source voltage.

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