| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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205 pcs
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205 pcs | On Request | 1 | On Request | On Request | 425 | On Request | On Request |
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The IRLU3717 from Infineon Technologies is a HEXFET Power MOSFET with an N-Channel configuration. It is designed for applications such as high-frequency synchronous buck converters for computer processor power and high-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.
Key electrical characteristics include a maximum drain-source voltage (VDSS) of 20V and a maximum on-resistance (RDS(on)) of 4.0mOhm at a gate-source voltage (VGS) of 4.5V. The typical gate charge (Qg) is 21nC. These specifications contribute to its benefits of very low RDS(on) and ultra-low gate impedance.
The component is housed in an I-Pak package, suitable for surface mounting. Its design emphasizes efficiency and performance in demanding power conversion scenarios.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) for the IRLU3717 is 20V.
The maximum on-resistance (RDS(on)) of the IRLU3717 at 4.5V VGS is 4.0mOhm.
The typical gate charge (Qg) for the IRLU3717 is 21nC.
The IRLU3717 is supplied in an I-Pak package.