| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,443 pcs
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1443 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRLU2703PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for applications requiring efficient switching and low on-resistance. Key specifications include a maximum drain-source voltage of 30V, continuous drain current of 23A at 25°C case temperature, and a pulsed drain current capability of 96A.
The device features a maximum drain-source on-resistance of 45mΩ at Vgs=10V and Id=14A, and a gate threshold voltage of 1V at Id=250µA. It supports logic-level gate drive with drive voltages of 4.5V and 10V. The gate charge is 15nC at Vgs=4.5V, and input capacitance is 450pF at Vds=25V. The MOSFET is fully avalanche rated with single pulse avalanche energy of 77mJ and repetitive avalanche energy of 4.5mJ.
The IRLU2703PBF is housed in a through-hole IPAK (TO-251AA) package with straight leads. It has a maximum power dissipation of 45W at 25°C case temperature and an operating junction temperature range of -55°C to 175°C. Thermal resistance from junction to case is 3.3°C/W, and from junction to ambient is 50°C/W (PCB mount) or 110°C/W.
This MOSFET is suitable for a variety of power management and switching applications, including DC-DC converters, motor control, and load switching. It is lead-free and RoHS3 compliant (unverified), with MSL 1 rating.
30V.
23A.
45mΩ maximum at Vgs=10V, Id=14A.
-55°C to 175°C junction temperature.
IPAK (TO-251AA) through-hole package.
Yes, verified lead-free per datasheet.
1V maximum at Id=250µA.