IRLU024NPBF IRLU024NPBF is a 55V, 17A N-Channel HEXFET Power MOSFET from Infineon Technologies. It features a low on-resistance of 65mOhm and is offered in an IPAK (TO-251AA) through-hole package.
Mfr Part #:

IRLU024NPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRLU024NPBF is a 55V, 17A N-Channel HEXFET Power MOSFET from Infineon Technologies. It features a low on-resistance of 65mOhm and is offered in an IPAK (TO-251AA) through-hole package.
✓ Total Stock: 5,320 pcs
$ Price Range: $0.49 - $1.83

IRLU024NPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,320 pcs
1320 pcs On Request 1 On Request On Request On Request On Request On Request

IRLU024NPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRLU024NPBF Description

Short technical summary and product information.

The IRLU024NPBF is an N-Channel power MOSFET part of the fifth-generation HEXFET series from Infineon Technologies. It is designed for logic-level gate drive with a maximum gate threshold voltage of 2V, enabling direct drive from 5V logic. The device delivers a continuous drain current of 17A at 25°C and 12A at 100°C, with a maximum drain-to-source voltage of 55V.

 

The MOSFET features a low maximum on-resistance of 65 mOhm at Vgs=10V, ensuring high efficiency in switching applications. It is fully avalanche rated with a single pulse avalanche energy of 68 mJ, making it robust for inductive loads. Fast switching characteristics are supported by a typical input capacitance of 480 pF and a gate charge of 15 nC.

 

Packaged in a through-hole IPAK (TO-251AA) case, the IRLU024NPBF is suitable for automated assembly. The operating junction temperature range spans -55°C to 175°C, with a maximum power dissipation of 45W at 25°C case temperature. The device is lead-free and marked as RoHS3 compliant.

IRLU024NPBF Quick Information

Product Type: MOSFET (Metal Oxide)
Series: HEXFET
Canonical Name: IRLU024NPBF N-Channel MOSFET
Subcategory: Single MOSFET

IRLU024NPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free (PbF)

IRLU024NPBF Estimated Pricing

Qty Low High
1+ $1.83 $1.83
10+ $0.82 $0.82
100+ $0.73 $0.73
500+ $0.61 $0.61
1,000+ $0.52 $0.52
3,000+ $0.49 $0.49

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRLU024NPBF Features

  • Logic-level gate drive suitable for 5V systems.
  • Low on-resistance of 65 mOhm typical.
  • Fully avalanche rated for rugged operation.
  • Lead-free and RoHS compliant.
  • Operating temperature range -55°C to 175°C.

IRLU024NPBF Applications

  • Used in switching power supplies and DC-DC converters.
  • Suitable for motor control circuits.
  • Ideal for battery management systems.
  • Applicable in automotive and industrial environments.

IRLU024NPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

The maximum drain-to-source voltage is 55V.

What package is the IRLU024NPBF available in?

It is available in TO-251-3 Short Leads, IPak, TO-251AA (IPAK) through-hole package.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IRLU024NPBF RoHS compliant?

Yes, it is marked as RoHS3 compliant and lead-free.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2V at 250µA drain current.

What is the typical on-resistance?

The maximum on-resistance is 65 mOhm at Vgs=10V, Id=10A.

Is the device avalanche rated?

Yes, it is fully avalanche rated with a single pulse avalanche energy of 68 mJ and repetitive avalanche energy of 4.5 mJ.

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