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IRLS640A N-Channel MOSFET rated for 200V drain-source voltage and 9.8A continuous drain current, in a TO-220F-3 through-hole package.
Mfr Part #:

IRLS640A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 200V drain-source voltage and 9.8A continuous drain current, in a TO-220F-3 through-hole package.
✓ Total Stock: 16,727 pcs
$ Price Range: $0.83 - $2.80

IRLS640A Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
16,727 pcs
On Request
16727 pcs On Request 1 On Request On Request On Request On Request On Request
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IRLS640A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRLS640A Description

Short technical summary and product information.

The IRLS640A is a 200V, 9.8A N-Channel MOSFET from On Semiconductor, using MOSFET (Metal Oxide) technology. It is designed for through-hole mounting in a TO-220-3 Full Pack (TO-220F-3) package.

 

Key electrical characteristics include a maximum drain-source on-resistance of 180 mOhm at 4.9A and 5V gate drive, a gate threshold voltage of 2V at 250µA, and a maximum gate charge of 56 nC at 5V. Input capacitance is 1705 pF at 25V drain-source. The device operates over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 40W at 25°C case temperature.

 

This MOSFET is suitable for switching and amplification applications in power management circuits where moderate voltage and current handling is required. The fully isolated TO-220F package eliminates the need for an insulating pad in many designs.

IRLS640A Quick Information

Product Type: N-Channel MOSFET
Canonical Name: IRLS640A N-Channel MOSFET
Subcategory: N-Channel MOSFET

IRLS640A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRLS640A Estimated Pricing

Qty Low High
1+ $2.80 $2.80
10+ $1.56 $1.56
100+ $1.12 $1.12
500+ $0.97 $0.97
1,000+ $0.88 $0.88
2,000+ $0.84 $0.84
5,000+ $0.83 $0.83

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRLS640A Features

  • N-Channel MOSFET rated for 200V drain-source voltage.
  • Continuous drain current of 9.8A at 25°C.
  • Low on-resistance of 180 mOhm at 4.9A, 5V.
  • Integrated in TO-220F-3 through-hole package.
  • Operating temperature range from -55°C to 150°C.

IRLS640A Applications

  • Suitable for power switching in DC-DC converters.
  • Used in motor control circuits requiring moderate current.
  • Ideal for battery protection and management systems.
  • Applicable in load switching for industrial equipment.

IRLS640A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRLS640A?

200V.

What package does the IRLS640A come in?

TO-220-3 Full Pack (TO-220F-3) through-hole.

What is the operating temperature range of the IRLS640A?

-55°C to 150°C (junction).

Is the IRLS640A RoHS compliant?

RoHS3 compliant per existing database.

What is the continuous drain current rating of the IRLS640A?

9.8A at 25°C case temperature.

What is the on-resistance of the IRLS640A?

Maximum 180 mOhm at 4.9A drain current and 5V gate-source voltage.

What is the gate threshold voltage of the IRLS640A?

Maximum 2V at 250µA drain current.

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