| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,314 pcs
|
3314 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,820 pcs
|
1820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLS3034TRL7PP is an N-Channel enhancement-mode power MOSFET from Infineon's HEXFET family, designed for high-efficiency power switching applications. It features a drain-source voltage rating of 40V and a continuous drain current of 240A (package limited by wire bond). The device achieves a typical on-resistance of 1.0mΩ and a maximum of 1.4mΩ at Vgs = 10V, with logic-level gate drive capability down to 4.5V.
This MOSFET is optimized for synchronous rectification in switched-mode power supplies, DC motor drives, and high-speed power switching circuits. It offers fully characterized capacitance and avalanche SOA, enhanced body diode dV/dt and dI/dt ruggedness, and a maximum junction temperature of 175°C. The device is housed in a TO-263-7 (D2PAK-7) surface-mount package with 6 leads plus tab, and is lead-free as stated in the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.75 | $4.75 |
| 10+ | $3.10 | $3.10 |
| 100+ | $2.62 | $2.62 |
| 500+ | $2.40 | $2.40 |
| 800+ | $2.31 | $2.31 |
| 2,400+ | $2.18 | $2.18 |
| 4,800+ | $1.98 | $1.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 40V.
The continuous drain current is 380A silicon limited at Tc=25°C, but package (wire bond) limited to 240A.
The typical on-resistance (Rds(on)) is 1.0mΩ at Vgs=10V, with a maximum of 1.4mΩ at Id=200A.
The operating junction temperature range is -55°C to +175°C.
It comes in a TO-263-7 (D2PAK-7) surface-mount package with 6 leads plus tab.
RoHS status is listed as RoHS3 compliant but is unverified. The datasheet states the device is lead-free.
The maximum gate threshold voltage (Vgs(th)) is 2.5V at Id=250µA.