| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRLR8113TRPBF is an N-Channel enhancement-mode power MOSFET from Infineon's HEXFET family, designed for high-efficiency power conversion. It features a drain-source breakdown voltage of 30V and can handle continuous drain current up to 94A at 25°C case temperature. The device offers very low static drain-source on-resistance: 4.8 mOhm typical and 6.0 mOhm maximum at Vgs=10V, Id=15A, and 5.8 mOhm typical / 7.4 mOhm maximum at Vgs=4.5V, Id=12A.
This MOSFET is optimized for high-frequency synchronous buck converters used in computer processor power supplies, as well as isolated DC-DC converters with synchronous rectification for telecom and industrial applications. It exhibits low gate charge (22 nC typical at 4.5V) and fast switching speeds with typical turn-on delay of 9.2 ns and rise time of 3.8 ns.
The device is housed in a surface-mount DPAK (TO-252) package and is lead-free. It operates over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 89W at 25°C case temperature.
The maximum drain-source voltage (Vdss) is 30V.
The continuous drain current is 94A at Tc=25°C and 67A at Tc=100°C with Vgs=10V.
The static drain-source on-resistance is 4.8 mOhm typical and 6.0 mOhm maximum at Vgs=10V, Id=15A. At Vgs=4.5V, Id=12A, it is 5.8 mOhm typical and 7.4 mOhm maximum.
It comes in a surface-mount DPAK package, also known as TO-252-3, DPak (2 Leads + Tab), SC-63.
The operating junction temperature range is -55°C to 175°C.
The part is marked as RoHS3 Compliant and is lead-free per the datasheet, but the RoHS status is unverified.