| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,358 pcs
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6358 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRLR8113 is an N-channel power MOSFET from Infineon Technologies designed for high-efficiency power conversion applications. It is rated for a maximum drain-to-source voltage of 30V and a continuous drain current of 94A at 25°C case temperature, with a pulsed drain current capability of 380A. The device features a low typical on-resistance of 4.8mΩ at 10V gate drive and 5.8mΩ at 4.5V, enabling efficient operation in low-voltage switching circuits.
The MOSFET has a gate threshold voltage range of 1.35V to 2.25V)Skip, allowing logic-level drive compatibility. Total gate charge is 22nC typical, and input capacitance is 2920pF, contributing to fast switching performance suitable for high-frequency synchronous buck converters and isolated DC-DC converters with synchronous rectification.
Thermal management is supported by a maximum power dissipation of 89W at 25°C case temperature and a junction-to-case thermal resistance of 1.69°C/W. The device operates over a junction temperature range of -55°C to 175°C. The body diode has a forward voltage of 1.0V maximum and a reverse recovery time of 33ns typical.
The IRL8113 is available in a D-Pak (TO-252-3) surface-mount package, suitable for automated assembly in compact power supply designs.
| Qty | Low | High |
|---|---|---|
| 75+ | $1.79 | $1.79 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V.
The continuous drain current is 94A at 25°C case temperature with 10V gate drive.
The on-resistance is 4.8mΩ typical (6.0mΩ max) at 10V gate drive and 5.8mΩ typical (7.4mΩ max) at 4.5V gate drive, both at 15A drain current.
The operating junction temperature range is -55°C to 175°C.
The IRL8113 is available in a TO-252-3 (D-Pak) surface-mount package.
The gate threshold voltage ranges from 1.35V minimum to 2.25V maximum at 250µA drain current.
The total gate charge is 22nC typical and 32nC maximum at 4.5V gate drive.