| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This component is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power conversion applications. The MOSFET features a maximum drain-to-source voltage of 30V and a continuous drain current of 161A at 25°C case temperature. The static drain-to-source on-resistance is typically 2.6mOhm and maximum 3.3mOhm at Vgs=10V, enabling low conduction losses.
The device offers a gate threshold voltage range of 1.4V to 2.3V, and a total gate charge of 34nC typical (50nC maximum) at Vgs=4.5V. Input capacitance is 4380pF typical at Vds=15V. These characteristics make it suitable for high-frequency switching applications, such as synchronous buck converters and isolated DC-DC converters with synchronous rectification.
Packaged in a surface mount DPAK (TO-252-3) case, the MOSFET supports solder reflow processes. It is rated for an operating junction temperature range of -55°C to 175°C and a maximum power dissipation of 140W at 25°C case temperature. The device is lead-free per the datasheet and is claimed to be RoHS and REACH compliant (unverified).
30 V
TO-252-3 (DPak, SC-63) surface mount package with supplier device package D-Pak.
-55°C to 175°C
Reported as RoHS3 compliant but unverified. The datasheet indicates the lead-free variant is RoHS compliant.
161A at case temperature 25°C with Vgs=10V.
34 nC typical, 50 nC maximum at Vgs=4.5V.
Typical 2.6 mOhm, maximum 3.3 mOhm at Vgs=10V, Id=15A. At Vgs=4.5V, Id=12A, typical 3.2 mOhm, maximum 4.0 mOhm.