| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,125 pcs
|
1125 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
143 pcs
|
143 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type |
The Infineon IRLR7843PBF is a HEXFET Power MOSFET suitable for high-frequency synchronous buck converters and isolated DC-DC converters with synchronous rectification. It features very low RDS(on) at 4.5V VGS and ultra-low gate impedance.
Key electrical characteristics include a Drain-to-Source Breakdown Voltage (BVDSS) of 30V and a maximum Static Drain-to-Source On-Resistance (RDS(on)) of 3.3mΩ at 25°C. The continuous drain current is rated at 161A at 25°C and 113A at 100°C (VGS @ 10V). The maximum power dissipation is 71W at 25°C.
This MOSFET is available in D-Pak and I-Pak packages, both surface mountable. It operates within a temperature range of -55°C to +175°C.
The device is designed for applications requiring high efficiency and performance in power conversion systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 161A at 25°C and 113A at 100°C, both with VGS at 10V.
The Drain-to-Source Breakdown Voltage (BVDSS) is 30V.
The maximum Static Drain-to-Source On-Resistance (RDS(on)) is 3.3mΩ.
The operating junction temperature range is -55°C to +175°C.
The IRLR7843PBF is available in D-Pak and I-Pak packages.