| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,500 pcs
|
6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLR7843CPBF is a high-performance N-Channel MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-frequency synchronous buck converters and isolated DC-DC converters. The device features a maximum drain-to-source voltage of 30V and a continuous drain current of 161A at 25°C case temperature, with a maximum power dissipation of 140W.
The MOSFET offers ultra-low on-resistance: 3.3mOhm maximum at Vgs=10V and 4.0mOhm maximum at Vgs=4.5V, which minimizes conduction losses. It has a total gate charge of 34nC typical, enabling fast switching. The device is characterized for operation over a junction temperature range of -55°C to 175°C.
The IRLR7843CPBF is housed in a D-Pak (TO-252) surface mount package, which is suitable for automated assembly. The package includes a lead-free and RoHS-compliant design. The MOSFET is also available in an I-Pak variant (IRLU7843CPBF) for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 600+ | $0.69 | $0.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
161A at Tc=25°C.
3.3mOhm maximum at Vgs=10V, Id=15A.
-55°C to 175°C.
D-Pak (TO-252) surface mount package.
Yes, RoHS3 compliant and lead-free.
34nC typical at Vgs=4.5V.