| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLR4343PBF is an N-Channel MOSFET from Infineon Technologies, designed for high-efficiency switching applications. It features a drain-source breakdown voltage of 55V and a continuous drain current of 26A at 25°C case temperature. The device offers low on-resistance: 42 mOhm typical at Vgs=10V and 57 mOhm typical at Vgs=4.5V, with maximum values of 50 mOhm and 65 mOhm respectively. Total gate charge is 28 nC typical, 42 nC maximum, enabling fast switching. Input capacitance is 740 pF maximum at Vds=50V. The MOSFET is optimized for Class-D audio amplifier applications, with low gate charge and reverse recovery charge for improved total harmonic distortion and efficiency. It operates over a junction temperature range of -40°C to 175°C, with a maximum power dissipation of 79W at 25°C. The device is housed in a TO-252-3 (DPak) surface-mount package, suitable for automated assembly. It is RoHS3 compliant and lead-free.
55V minimum breakdown voltage.
TO-252-3, DPak (2 Leads + Tab), SC-63 surface-mount package.
-40°C to 175°C.
Yes, RoHS3 compliant and lead-free.
42 mOhm typical at Vgs=10V, 50 mOhm maximum.
26A at Tc=25°C, 19A at Tc=100°C.
28 nC typical, 42 nC maximum at Vgs=10V.