| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies IRLR3915TRPBF is a 55V N-Channel HEXFET® Power MOSFET designed for high efficiency and reliability. It features an ultra low on-resistance of 14mOhm at 10V gate drive, enabling high current handling with minimal power loss. The device is rated for a continuous drain current of 30A at 25°C case temperature (package limited), with a pulsed drain current capability of 240A. The MOSFET can operate at junction temperatures up to 175°C, making it suitable for demanding thermal environments.
This MOSFET is housed in a surface mount D-Pak (TO-252) package, which provides a compact footprint for space-constrained designs. Key electrical characteristics include a typical gate threshold voltage of 3V, a maximum gate charge of 92nC, and an input capacitance of 1870pF. The device supports drive voltages of 5V and 10V for optimal on-resistance. Thermal characteristics include a junction-to-case thermal resistance of 1.3°C/W and a maximum power dissipation of 120W.
The HEXFET® process ensures fast switching speeds and improved repetitive avalanche capability, with a single pulse avalanche energy rating of 200mJ. This makes the IRLR3915TRPBF well-suited for applications such as DC-DC converters, motor control, and power management in industrial and automotive systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.56 | $1.56 |
| 10+ | $0.99 | $0.99 |
| 100+ | $0.66 | $0.66 |
| 500+ | $0.56 | $0.56 |
| 2,000+ | $0.56 | $0.56 |
| 4,000+ | $0.39 | $0.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 55V.
It is available in a surface mount D-Pak (TO-252) package.
The junction temperature range is -55°C to 175°C.
The part is indicated as RoHS3 compliant, but this status is unverified. It is recommended to obtain an official RoHS certificate.
The maximum gate threshold voltage is 3V at 250µA drain current.
The maximum drain-source on-resistance is 14mOhm at 30A drain current and 10V gate-source voltage.
The maximum gate charge is 92nC at 10V gate-source voltage.