| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,700 pcs
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4700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLR3915PBF is an N-Channel enhancement-mode power MOSFET from Infineon's HEXFET family, built with advanced process technology for ultra-low on-resistance. It features a drain-to-source breakdown voltage of 55V minimum and a continuous drain current rating of 30A (package limited at 25°C) or 61A (silicon limited). The device can handle pulsed drain currents up to 240A and delivers a maximum power dissipation of 120W at 25°C case temperature.
Electrical characteristics include a static drain-to-source on-resistance of 14 mΩ maximum (typical 12 mΩ) at VGS = 10V and ID = 30A, and 17 mΩ maximum at VGS = 5.0V and ID = 26A. Gate threshold voltage ranges from 1.0V to 3.0V with a 250µA drain current. The device offers fast switching with typical turn-on delay of 7.4 ns, rise time of 51 ns, turn-off delay of 83 ns, and fall time of 100 ns. Total gate charge is 92 nC maximum (typical 61 nC) at VGS = 10V. The 175°C maximum junction temperature allows for robust operation in high-temperature environments.
The IRLR3915PBF is provided in a TO-252-3 (DPak) surface-mount package with a D-Pak supplier device package and gull wing leads. It is lead-free and designed for a wide range of power conversion and switching applications. Operating temperature range is -55°C to +175°C.
The minimum drain-to-source breakdown voltage is 55 V at VGS = 0V and ID = 250µA.
30 A maximum (package limited) and 61 A maximum (silicon limited) at TC = 25°C and VGS = 10V.
Maximum 14 mΩ at VGS=10V, ID=30A (typical 12 mΩ).
TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package with D-Pak supplier device package.
-55°C to 175°C (junction temperature).
RoHS status is listed as RoHS3 Compliant but is unverified and low confidence. The component is confirmed lead-free per datasheet.