| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
956 pcs
|
956 pcs | On Request | 1 | On Request | On Request | 0826P | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IRLR3705ZTRPBF is an N-Channel enhancement-mode power MOSFET built using HEXFET technology. It delivers a drain-to-source voltage of 55V and supports a continuous drain current of 42A (silicon-limited at 190A, package-limited at 110A). The device features an ultra-low on-resistance of 8.0 mΩ maximum at 10V gate drive, enabling high efficiency in power conversion systems.
This MOSFET supports a maximum junction temperature of 175°C and includes fast switching characteristics with typical rise time of 150ns and fall time of 70ns. The gate charge is 66 nC maximum at 5V gate-to-source voltage, making it suitable for logic-level drive applications.
The device is housed in a surface-mount D-Pak (TO-252-3) package with gull-wing leads, compatible with standard SMD assembly processes. It is lead-free and RoHS3 compliant.
Design considerations include a maximum drain-to-source leakage current of 20 µA and a gate threshold voltage range of 1.0V to 3.0V. The input capacitance is 2900 pF typical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.09 | $2.09 |
| 10+ | $1.34 | $1.34 |
| 100+ | $0.90 | $0.90 |
| 500+ | $0.72 | $0.72 |
| 1,000+ | $0.66 | $0.66 |
| 2,000+ | $0.60 | $0.60 |
| 4,000+ | $0.58 | $0.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 55 V.
The device is supplied in a TO-252-3 (DPak) surface-mount package, also known as D-Pak.
The junction operating temperature range is -55°C to 175°C.
RoHS3 compliant per existing data (unverified). The datasheet lists lead-free as a feature.
The maximum drain-to-source on-resistance is 8.0 mΩ at Id=42A, Vgs=10V.
The maximum gate charge (Qg) is 66 nC at Vgs=5V.
The continuous drain current is 42 A (Tc unspecified). Silicon-limited rating at Tc=25°C is 190 A, package-limited is 110 A.