| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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The IRLR3705ZPBF is an N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency switching applications with a drain-source voltage rating of 55V and a continuous drain current of 42A (package limited at Tc=25°C). The device features an ultra-low on-resistance of 8mOhm at 42A and 10V gate drive, enabling low conduction losses.
Key electrical characteristics include a maximum gate threshold voltage of 3V at 250µA, a total gate charge of 66nC at 5V, and an input capacitance of 2900pF at 25V. The device supports a drive voltage range of 4.5V to 10V and can withstand a maximum gate-source voltage of ±16V. Power dissipation is rated at 130W at Tc=25°C.
The MOSFET is housed in a surface-mount TO-252-3 (D-Pak) package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 175°C. The datasheet indicates a silicon-limited current of 89A, but the package limits continuous current to 42A. The part is marked as RoHS3 compliant and REACH unaffected, though these compliance claims are unverified.
55V.
42A at Tc=25°C (package limited).
8mOhm at 42A and 10V gate drive.
-55°C to 175°C (junction).
TO-252-3 (D-Pak).
RoHS3 Compliant (unverified).
3V maximum at 250µA.