SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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67 pcs
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67 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale IRLR3636PBF is an N-Channel Power MOSFET featuring a 60V drain-source breakdown voltage. It is optimized for logic-level drive with very low RDS(ON) at 4.5V VGS, offering superior R*Q at 4.5V VGS. The device boasts a typical on-resistance of 5.4mΩ and a maximum of 6.8mΩ at VGS = 10V. Continuous drain current is rated at 99A (silicon limited) and 50A (package limited) at 25°C.
This MOSFET is suitable for applications such as DC motor drive, high efficiency synchronous rectification in SMPS, uninterruptible power supply, and high-speed power switching. It is housed in a D-Pak package for surface mounting.
Key electrical characteristics include a maximum power dissipation of 96W at 25°C and a gate-to-source voltage range of ±16V. The operating junction and storage temperature range is -55°C to +175°C. Thermal resistance from junction-to-case is a maximum of 1.05°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (Vds) is 60V.
The typical On-Resistance (Rds(on)) is 5.4mΩ at VGS = 10V.
The continuous drain current is 99A (silicon limited) and 50A (package limited) at 25°C.
The operating junction and storage temperature range is -55°C to +175°C.
The IRLR3636PBF is supplied in a D-Pak package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
