| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRLR3636PBF is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications, featuring a drain-to-source voltage rating of 60V and a continuous drain current of 50A at 25°C case temperature. The device achieves a maximum on-resistance of 6.8mOhm when driven with a 10V gate-to-source voltage, and 4.5V drive is also supported for lower-voltage logic-level control.
This MOSFET has a maximum gate charge of 49nC at 4.5V, which enables fast switching and reduced gate drive losses. The input capacitance is 3779pF at 50V drain-source voltage. The gate threshold voltage is 2.5V maximum at 100µA drain current, and the maximum gate-source voltage rating is ±16V.
The device is housed in a TO-252-3 (DPak) surface-mount package, also known as SC-63, with a supplier device package designation of D-Pak. It is rated for a maximum power dissipation of 143W at case temperature, and operates over a junction temperature range of -55°C to 175°C.
Typical applications include power supplies, DC-DC converters, motor control, and load switching in industrial and consumer electronics. The surface-mount package facilitates automated assembly and compact PCB layouts.
The maximum drain-to-source voltage (Vdss) is 60V.
The maximum continuous drain current is 50A at 25°C case temperature.
The maximum on-resistance is 6.8mOhm at 50A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 175°C.
The IRLR3636PBF is available in a TO-252-3 (DPak) surface-mount package, also known as SC-63.
The IRLR3636PBF is marked as RoHS3 compliant, though this is unverified.