| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
133,020 pcs
|
133020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
54,000 pcs
|
54000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLR3410TRLPBF is an N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source breakdown voltage of 100V and a continuous drain current of 17A at 25°C. The device offers ultra-low on-resistance: 105mΩ at VGS=10V, 125mΩ at VGS=5V, and 155mΩ at VGS=4V, enabling logic-level gate drive operation.
This MOSFET is fully avalanche rated with a single pulse avalanche energy of 150mJ and repetitive avalanche energy of 7.9mJ. It has a maximum power dissipation of 79W at 25°C case temperature and a junction-to-case thermal resistance of 1.9°C/W. The gate threshold voltage ranges from 1.0V to 2.0V, and the gate-source voltage is rated up to ±16V.
The device is housed in a D-Pak (TO-252) surface mount package with gull wing leads. It is available in tape and reel packaging (2000 units per reel) for automated assembly. The part is lead-free according to the datasheet, and RoHS compliance is listed but unverified.
Typical applications include DC-DC converters, motor control circuits, power management systems, and high-efficiency switching power supplies. The fast switching HEXFET technology and rugged design make it suitable for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.39 | $1.39 |
| 10+ | $0.86 | $0.86 |
| 100+ | $0.57 | $0.57 |
| 500+ | $0.45 | $0.45 |
| 1,000+ | $0.39 | $0.39 |
| 3,000+ | $0.31 | $0.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100 V minimum at VGS=0V, ID=250µA.
It is available in a TO-252-3 (DPak) surface mount package.
The junction and storage temperature range is -55°C to 175°C.
The part is listed as RoHS3 Compliant, but this has not been verified. The datasheet confirms it is lead-free.
The maximum on-resistance is 105 mΩ at VGS=10V, ID=10A; 125 mΩ at VGS=5V, ID=10A; and 155 mΩ at VGS=4V, ID=9A.
The gate threshold voltage ranges from 1.0V to 2.0V at VDS=VGS, ID=250µA.
The single pulse avalanche energy is 150 mJ at VDD=25V, TJ=25°C, L=3.1mH, RG=25Ω, IAS=9.0A.