| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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809 pcs
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809 pcs | On Request | 1 | On Request | On Request | 4 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The Infineon Technologies IRLR3410 is a Fifth Generation HEXFET Power MOSFET designed for high efficiency applications. It features an ultra low on-resistance of 0.105 Ohms at a gate-source voltage of 10V and a drain current of 10A. The device boasts a continuous drain current rating of 17A at 25°C case temperature and 12A at 100°C case temperature.
With a drain-to-source breakdown voltage of 100V, the IRLR3410 is suitable for various power management tasks. It operates within a junction temperature range of -55°C to +175°C and is housed in a D-Pak surface mount package, designed for vapor phase, infrared, or wave soldering techniques.
Key electrical characteristics include a gate-to-source voltage tolerance of ±16V and a power dissipation of 79W at 25°C case temperature. The MOSFET is fully avalanche rated, providing enhanced ruggedness for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current for the IRLR3410 at 25°C case temperature is 17A.
The drain-to-source breakdown voltage of the IRLR3410 is 100V.
The static drain-to-source on-resistance is 0.105 Ohms at VGS = 10V and ID = 10A.
The operating junction and storage temperature range is -55°C to +175°C.
The IRLR3410 is supplied in a D-Pak package designed for surface mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
