| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLR3110ZTRLPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET series. It is designed for industrial applications requiring high efficiency and reliability. The device features a drain-source voltage of 100V and a continuous drain current of 42A at 25°C (package limited), with a pulsed drain current capability of 250A. The maximum on-resistance is 14mΩ at Vgs=10V and Id=38A, with a typical value of 11mΩ, enabling low conduction losses.
This MOSFET utilizes advanced process technology to achieve ultra-low on-resistance per silicon area. It supports a gate-source voltage range of ±16V and has a gate threshold voltage of 2.5V at 100µA. The total gate charge is 48nC at 4.5V, and the input capacitance is 3980pF at 25V, contributing to fast switching performance. The device is rated for a maximum power dissipation of 140W at 25°C case temperature and can operate at junction temperatures up to 175°C.
The IRLR3110ZTRLPBF is available in a surface-mount DPAK (TO-252-3) package, suitable for automated assembly. It is designed for industrial power conversion, motor control, and other high-current switching applications. The device also supports repetitive avalanche operation up to the maximum junction temperature, enhancing robustness in demanding environments.
With its combination of low on-resistance, high current capability, and wide operating temperature range, this MOSFET is suitable for a variety of power management and switching circuits. The package is lead-free and RoHS-compliant, meeting modern environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.78 | $2.78 |
| 10+ | $1.79 | $1.79 |
| 100+ | $1.23 | $1.23 |
| 500+ | $0.99 | $0.99 |
| 1,000+ | $0.91 | $0.91 |
| 3,000+ | $0.89 | $0.89 |
| 6,000+ | $0.87 | $0.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 100V.
The continuous drain current is 42A at 25°C (package limited) and 63A (silicon limited).
The maximum on-resistance is 14mΩ at Vgs=10V and Id=38A, with a typical value of 11mΩ.
The operating junction temperature range is -55°C to +175°C.
The device is available in a surface-mount DPAK (TO-252-3) package.
The maximum power dissipation is 140W at 25°C case temperature.
The maximum gate threshold voltage is 2.5V at a drain current of 100µA.