| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLR3110ZPBF is an N-Channel Power MOSFET manufactured by Infineon Technologies, part of the HEXFET family. It is designed for industrial applications requiring high efficiency and reliability. The device features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 42A at 25°C (package limited), with a silicon-limited capability of 63A. The static drain-to-source on-resistance (Rds(on)) is just 14mΩ maximum at Vgs=10V and Id=38A, and 16mΩ at Vgs=4.5V, enabling low conduction losses. The MOSFET offers fast switching with a gate charge (Qg) of 48nC at 4.5V and input capacitance (Ciss) of 3980pF at 25V. It is rated for repetitive avalanche with a single pulse avalanche energy (EAS) of 110mJ (thermally limited) and 140mJ (tested). The device can operate over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 140W at 25°C case temperature. The thermal resistance junction-to-case is 1.05°C/W. The IRLR3110ZPBF is housed in a DPAK (D-Pak) surface-mount package, suitable for automated assembly. Its advanced process technology and ultra-low on-resistance make it ideal for high-power switching circuits, DC-DC converters, and motor control applications.
The drain-to-source voltage (Vdss) is 100V.
The IRLR3110ZPBF is in a DPAK (D-Pak) surface-mount package.
The operating junction temperature range is -55°C to 175°C.
At Tc=25°C, the package-limited continuous drain current is 42A, and the silicon-limited value is 63A. At Tc=100°C, it is 45A.
The maximum static drain-to-source on-resistance is 14mΩ at Vgs=10V, Id=38A, and 16mΩ at Vgs=4.5V, Id=32A.
The gate threshold voltage (Vgs(th)) ranges from 1V to 2.5V at Id=100µA.
The single pulse avalanche energy (EAS) is 110mJ thermally limited and 140mJ tested.