| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLR3103TR is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It offers a drain-source breakdown voltage of 30V minimum and a continuous drain current of 55A at 25°C case temperature. The device provides ultra-low on-resistance of 19mOhm maximum at VGS=10V and ID=33A, and 24mOhm at VGS=4.5V, enabling logic-level gate drive operation.
Key electrical characteristics include a gate threshold voltage of 1V minimum, input capacitance of 1600pF typical, and total gate charge of 50nC at VGS=4.5V. The MOSFET is fully avalanche rated with a single pulse avalanche energy of 240mJ and repetitive avalanche energy of 11mJ. It operates over a junction temperature range of -55°C to 175°C.
The device is housed in a surface mount D-Pak package (TO-252-3) with gull wing terminals, suitable for automated assembly. Thermal resistance junction-to-case is 1.4°C/W, and junction-to-ambient (PCB mount) is 50°C/W typical. The part is lead-free (PbF marking).
| Qty | Low | High |
|---|---|---|
| 2,000+ | $1.02 | $1.02 |
| 4,000+ | $1.02 | $1.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V minimum at VGS=0V, ID=250µA.
Surface mount D-Pak (TO-252-3) package.
-55°C to 175°C junction temperature.
The part is marked lead-free (PbF) but RoHS compliance is unverified. Verify with manufacturer.
Maximum 19mOhm at VGS=10V, ID=33A; 24mOhm at VGS=4.5V, ID=25A.
50nC maximum at ID=34A, VDS=24V, VGS=4.5V.
240mJ single pulse avalanche energy at starting TJ=25°C.