| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLR3103PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET series. It offers a drain-source breakdown voltage of 30V and a continuous drain current of 55A at 25°C case temperature. The device features an ultra-low on-resistance of 19mΩ maximum at Vgs=10V and 24mΩ at Vgs=4.5V, enabling high efficiency in switching applications.
This MOSFET is logic-level gate drive capable with a maximum gate threshold voltage of 1V, allowing direct drive from low-voltage logic. It is fully avalanche rated with a single pulse avalanche energy of 240mJ and repetitive avalanche energy of 11mJ. The total gate charge is 50nC, supporting fast switching transitions.
The device is housed in a DPAK (TO-252) surface mount package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 107W at 25°C case temperature. Thermal resistance junction-to-case is 1.4°C/W.
The drain-source breakdown voltage is 30V minimum.
55A at Tc=25°C with Vgs=10V, and 39A at Tc=100°C.
Maximum 19mΩ at Vgs=10V, Id=33A.
Maximum 1V at Id=250µA.
-55°C to 175°C junction temperature.
Surface mount DPAK (TO-252-3).
It is marked as RoHS3 compliant, but this is unverified.