| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRLR3103 is a logic-level N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is rated for a drain-source voltage of 30V and a continuous drain current of 55A at 25°C case temperature. The device offers ultra-low on-resistance of 19 mOhm typical at Vgs=10V and 24 mOhm at Vgs=4.5V, enabling high efficiency in low-voltage switching applications.
Electrical characteristics include a maximum gate threshold voltage of 1V at 250µA, total gate charge of 50 nC at 4.5V, and input capacitance of 1600 pF at 25V. The MOSFET is fully avalanche rated with a single pulse avalanche energy of 240 mJ, ensuring ruggedness in inductive switching environments.
Packaged in a surface-mount TO-252-3 (D-Pak) case, the IRLR3103 is suitable for automated assembly. It supports a wide operating junction temperature range of -55°C to 175°C. The device is lead-free and RoHS3 compliant, though compliance is based on database records and not directly verified from manufacturer documentation.
| Qty | Low | High |
|---|---|---|
| 75+ | $1.52 | $1.52 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V.
The IRLR3103 is available in a surface-mount TO-252-3 (D-Pak) package.
The operating junction temperature range is -55°C to 175°C.
The IRLR3103 is listed as RoHS3 compliant, but this is unverified from manufacturer documentation.
The continuous drain current is 55A at 25°C case temperature with Vgs=10V.
The on-resistance is 19 mOhm at Vgs=10V, Id=33A, and 24 mOhm at Vgs=4.5V, Id=25A.
The total gate charge is 50 nC at Vgs=4.5V.