| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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33 pcs
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33 pcs | On Request | 1 | On Request | On Request | 1451 | On Request | On Request |
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The Infineon IRLR2908PBF is a high-performance N-Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) suitable for various switching applications. It offers a minimum breakdown voltage of 80V and can handle a maximum continuous drain current of 30A. The device exhibits a low maximum on-resistance of 0.028 Ohms, contributing to efficient power transfer.
This MOSFET operates within a wide temperature range, from -55°C to 175°C, and has a maximum power dissipation of 120W. It is packaged in a TO-252AA surface-mount case with gull-wing terminals, designed for automated assembly processes. The peak reflow temperature is rated at 240°C for up to 30 seconds.
Key electrical characteristics include a feedback capacitance of 35pF and an avalanche energy rating of 180 mJ. The transistor element is made of silicon, and the FET technology is Metal-Oxide Semiconductor. This component is classified under N-Channel polarity and is intended for switching transistor applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRLR2908PBF is packaged in a TO-252AA surface mount package with gull-wing terminals.
The operating temperature range is -55°C to 175°C.
The minimum drain-source breakdown voltage is 80V.
The maximum continuous drain current is 30A, and the pulsed drain current is 150A.
The maximum drain-source on-resistance is 0.028Ω.
It is an N-Channel Metal-Oxide Semiconductor MOSFET.
The avalanche energy rating is 180 Mj.