IRLR2905ZTRPBF IRLR2905ZTRPBF is an N-Channel power MOSFET from Infineon Technologies. It features a 55V drain-source breakdown voltage and 42A continuous drain current.
Mfr Part #:

IRLR2905ZTRPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRLR2905ZTRPBF is an N-Channel power MOSFET from Infineon Technologies. It features a 55V drain-source breakdown voltage and 42A continuous drain current.
✓ Total Stock: 23,000 pcs
$ Price Range: $0.51 - $1.80

IRLR2905ZTRPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
20,000 pcs
20000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

IRLR2905ZTRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRLR2905ZTRPBF Description

Short technical summary and product information.

The IRLR2905ZTRPBF is an N-Channel enhancement-mode power MOSFET manufactured by Infineon Technologies. It is part of the HEXFET family and utilizes advanced processing techniques to achieve low on-resistance per silicon area.

 

Key electrical specifications include a maximum drain-to-source voltage of 55V, a continuous drain current of 42A at 25°C case temperature, and a typical on-resistance of 11 mOhm at 10V gate drive. The device is rated for a maximum power dissipation of 110W and can operate at junction temperatures up to 175°C.

 

The MOSFET is designed for fast switching applications with typical turn-on delay of 14 ns and rise time of 130 ns. It also supports repetitive avalanche energy up to 103 mJ, making it suitable for rugged industrial environments.

 

This component is offered in a surface-mount D-Pak package (TO-252-3) and is lead-free and RoHS compliant. It is commonly used in power management, DC-DC converters, and motor control circuits.

IRLR2905ZTRPBF Quick Information

Product Type: MOSFET
Canonical Name: IRLR2905ZTRPBF N-Channel MOSFET
Subcategory: Power MOSFET

IRLR2905ZTRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRLR2905ZTRPBF Estimated Pricing

Qty Low High
1+ $1.80 $1.80
10+ $1.20 $1.20
100+ $0.76 $0.76
500+ $0.62 $0.62
1,000+ $0.56 $0.56
2,000+ $0.52 $0.52
4,000+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRLR2905ZTRPBF Features

  • N-Channel MOSFET with 55V drain-source voltage.
  • Continuous drain current rated at 42A.
  • Ultra low on-resistance of 13.5 mOhm maximum.
  • 175°C maximum junction operating temperature.
  • Fast switching with 14 ns turn-on delay.

IRLR2905ZTRPBF Applications

  • Ideal for DC-DC converter power stages.
  • Used in motor control and drive circuits.
  • Suitable for power management in industrial systems.
  • Applicable in automotive electronic modules.

IRLR2905ZTRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRLR2905ZTRPBF?

The maximum drain-source voltage is 55V.

What is the continuous drain current rating?

The continuous drain current is 42A at 25°C case temperature.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IRLR2905ZTRPBF RoHS compliant?

Yes, it is listed as RoHS3 compliant and is lead-free.

What package does this MOSFET come in?

It is available in a surface-mount D-Pak package (TO-252-3).

What is the typical on-resistance?

The typical on-resistance is 11 mOhm at 10V gate drive, with a maximum of 13.5 mOhm.

What is the maximum power dissipation?

The maximum power dissipation is 110W at 25°C case temperature.

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