| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLR2905ZTRLPBF from Infineon Technologies is an N-channel enhancement-mode power MOSFET built using advanced process technology. It is rated for a drain-source voltage of 55V and a continuous drain current of 42A at Tc=25°C (silicon limited), with a maximum power dissipation of 110W.
The device features an ultra-low on-resistance of 13.5mΩ maximum at Vgs=10V and Id=36A, along with a typical gate charge of 23nC. With a maximum gate threshold voltage of 3V, it supports logic-level gate drive at 4.5V as well as 10V drive. Fast switching and 175°C junction temperature rating allow efficient operation in power switching circuits.
The surface-mount D-Pak (TO-252-3) package with gull-wing leads facilitates compact PCB assembly. The part is lead-free and RoHS3 compliant.
55 V.
42 A at Tc=25°C (silicon limited).
13.5 mΩ maximum at Vgs=10V, Id=36A; typical 11 mΩ.
TO-252-3, D-Pak (2 leads + tab), SC-63; surface mount.
-55°C to +175°C junction temperature.
Yes, it is RoHS3 compliant and lead-free.
3 V maximum at Id=250µA.