IRLR2705PBF N-Channel Power MOSFET with 55V drain-source voltage and 28A continuous drain current. Features ultra low on-resistance of 40mΩ at 10V gate drive.
Mfr Part #:

IRLR2705PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel Power MOSFET with 55V drain-source voltage and 28A continuous drain current. Features ultra low on-resistance of 40mΩ at 10V gate drive.
✓ Total Stock: 8,000 pcs

IRLR2705PBF Available from 1 distributor

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IRLR2705PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRLR2705PBF Description

Short technical summary and product information.

The IRLR2705PBF is a fifth-generation HEXFET Power MOSFET from Infineon Technologies. It is an N-Channel enhancement mode MOSFET designed for logic-level gate drive operation, with a maximum drain-to-source voltage of 55V and continuous drain current of 28A at 25°C case temperature. The device features ultra low on-resistance: 40mΩ maximum at Vgs=10V and Id=17A, and 65mΩ maximum at Vgs=4V, making it suitable for low-voltage power switching applications.

 

The MOSFET is fully avalanche rated with a single pulse avalanche energy of 110mJ and a peak diode recovery dv/dt of 5.0 V/ns. It offers fast switching performance with a typical input capacitance of 880pF at Vds=25V and total gate charge of 25nC at Vgs=5V. The operating junction temperature range is -55°C to 175°C, with a maximum power dissipation of 68W at 25°C case temperature.

 

The IRLR2705PBF is housed in a D-PAK (DPAK) surface mount package, designed for vapor phase, infrared, or wave soldering. It is lead-free (PbF suffix) and RoHS compliant. Typical applications include DC-DC converters, motor control, power management in portable devices, and automotive systems.

IRLR2705PBF Quick Information

Product Type: Power MOSFET
Series: HEXFET
Canonical Name: IRLR2705PBF N-Channel MOSFET
Subcategory: N-Channel MOSFET

IRLR2705PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant
Lead Free: Yes

IRLR2705PBF Features

  • Logic-level gate drive capability.
  • Ultra low on-resistance of 40mΩ.
  • Fully avalanche rated design.
  • Surface mount D-PAK package.
  • Operating temperature range -55°C to 175°C.

IRLR2705PBF Applications

  • Suitable for DC-DC converter circuits.
  • Used in motor control applications.
  • Ideal for power management in portable devices.
  • Applicable in automotive systems.

IRLR2705PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IRLR2705PBF?

The maximum drain-to-source voltage (Vdss) is 55 V.

What is the continuous drain current rating?

The continuous drain current is 28 A at Tc=25°C and 20 A at Tc=100°C.

What is the on-resistance at 10V gate drive?

The maximum on-resistance is 40 mΩ at Vgs=10V and Id=17A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the IRLR2705PBF available in?

It is available in a D-PAK (DPAK) surface mount package.

Is the IRLR2705PBF RoHS compliant?

Yes, the part number suffix PBF indicates lead-free and RoHS compliance.

What is the gate threshold voltage range?

The gate threshold voltage (Vgs(th)) ranges from 1 V to 2 V at Id=250 µA.

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