| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLR2705PBF is a fifth-generation HEXFET Power MOSFET from Infineon Technologies. It is an N-Channel enhancement mode MOSFET designed for logic-level gate drive operation, with a maximum drain-to-source voltage of 55V and continuous drain current of 28A at 25°C case temperature. The device features ultra low on-resistance: 40mΩ maximum at Vgs=10V and Id=17A, and 65mΩ maximum at Vgs=4V, making it suitable for low-voltage power switching applications.
The MOSFET is fully avalanche rated with a single pulse avalanche energy of 110mJ and a peak diode recovery dv/dt of 5.0 V/ns. It offers fast switching performance with a typical input capacitance of 880pF at Vds=25V and total gate charge of 25nC at Vgs=5V. The operating junction temperature range is -55°C to 175°C, with a maximum power dissipation of 68W at 25°C case temperature.
The IRLR2705PBF is housed in a D-PAK (DPAK) surface mount package, designed for vapor phase, infrared, or wave soldering. It is lead-free (PbF suffix) and RoHS compliant. Typical applications include DC-DC converters, motor control, power management in portable devices, and automotive systems.
The maximum drain-to-source voltage (Vdss) is 55 V.
The continuous drain current is 28 A at Tc=25°C and 20 A at Tc=100°C.
The maximum on-resistance is 40 mΩ at Vgs=10V and Id=17A.
The operating junction temperature range is -55°C to 175°C.
It is available in a D-PAK (DPAK) surface mount package.
Yes, the part number suffix PBF indicates lead-free and RoHS compliance.
The gate threshold voltage (Vgs(th)) ranges from 1 V to 2 V at Id=250 µA.