| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,500 pcs
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4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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IRLR120NPBF is a N-Channel power MOSFET from Infineon Technologies, part of the HEXFET series. It is designed for high-efficiency power conversion and switching applications. The device utilizes advanced process technology to achieve fast switching and is fully avalanche rated.
Key electrical specifications include a maximum drain-source voltage of 100V, continuous drain current of 10A, and on-resistance of 185mΩ at 6A and 10V gate drive. The gate charge is 20nC at 5V, and input capacitance is 440pF at 25V. The threshold voltage is 2V at 250µA, with a maximum gate-source voltage of ±16V. Power dissipation is rated at 48W.
The MOSFET is offered in a surface mount D-Pak (TO-252) package with 2 leads plus tab, suitable for automated assembly. The operating junction temperature range is -55°C to 175°C, enabling reliable performance in demanding environments.
100V.
10A.
185mΩ at 6A and 10V gate drive.
-55°C to 175°C (junction temperature).
D-Pak (TO-252) surface mount.
RoHS3 compliant (unverified).
20nC at 5V gate-source voltage.