| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,002 pcs
|
3002 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
340 pcs
|
340 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLR110TRPBF is a third-generation N-Channel power MOSFET from Vishay Siliconix designed for fast switching and ruggedness. It features a logic-level gate drive allowing operation with 4V and 5V gate voltages, making it suitable for direct interface with low-voltage controllers. The device is rated for a maximum drain-source voltage of 100V and a continuous drain current of 4.3A at 25°C case temperature. The on-resistance is a maximum of 540 milliohms at 2.6A drain current and 5V gate-source voltage. Total gate charge is 6.1 nC, with typical gate-source charge of 2.0 nC and gate-drain charge of 3.3 nC. The MOSFET is avalanche rated with a single pulse avalanche energy of 100 mJ and repetitive avalanche current of 4.3A. It also features a peak diode recovery dV/dt rating of 5.5 V/ns. The part is packaged in a DPAK (TO-252) surface-mount package and is also available in tape and reel. The operating junction temperature range is -55°C to 150°C. Power dissipation is 25W at case temperature and 2.5W on a standard PCB. The IRLR110TRPBF is lead (Pb)-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.31 | $2.31 |
| 10+ | $1.12 | $1.12 |
| 100+ | $1.00 | $1.00 |
| 500+ | $0.63 | $0.63 |
| 2,000+ | $0.63 | $0.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The continuous drain current is 4.3 A at Tc = 25°C.
The maximum on-resistance is 540 mΩ at Id = 2.6 A and Vgs = 5 V.
The operating junction temperature range is -55°C to 150°C.
It is available in a DPAK (TO-252) surface-mount package.
Yes, the device is marked as RoHS3 compliant and lead-free per the datasheet ordering code.
Yes, it is specified for gate drive voltages of 4V and 5V, making it suitable for logic-level operation.