| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
340 pcs
|
340 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
32 pcs
|
32 pcs | On Request | 1 | On Request | On Request | 1137 | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLR110PBF is an N-Channel power MOSFET from Vishay siliiconix (manufacurer noted as Vishay Dale in our system). It is designed for surface-mount applications using the DPAK (TO-252) package, with a maximum drain-source voltage of 100V and continuous drain current of 4.3A at 25°C (2.7A at 100°C). The device features logic-level gate drive, with on-resistance specified at 4V and 5V gate drive.
The MOSFET offers repetitive avalanche ratings up to 100mJ single pulse and 2.5mJ repetitive, with an avalanche current rating of 4.3A. It also includes a dynamic dV/dt rating. Gate charge characteristics include a total gate charge of 6.1nC, with gate-source charge of 2.0nC and gate-drain charge of3.3nC. Input capacitance is250pF at25V drain-source voltage.
The device is mounted using surface-mount technology in a DPAK package, which is suitable for vapor phase, infrared, or wave soldering. Maximum power dissipation is25W at case temperature25°C, derating linearly at0.20W/°C. Operating junction temperature range is -55°C to150°C. The device is lead (Pb)-free as per the ordering information.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.18 | $2.18 |
| 10+ | $1.08 | $1.08 |
| 100+ | $0.88 | $0.88 |
| 500+ | $0.74 | $0.74 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The device is available in a TO-252-3 (DPak) surface mount package.
The operating junction temperature range is -55°C to 150°C.
The device is marked as RoHS3 compliant and lead-free, but this information is unverified.
The maximum drain-source on-resistance is 540 mΩ at Id=2.6A and Vgs=5V.
The maximum gate charge is 6.1 nC at Vgs=5V.
The maximum continuous drain current is 4.3 A at case temperature 25°C, and 2.7 A at 100°C.