| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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763 pcs
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763 pcs | On Request | 1 | On Request | On Request | 9619 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLR024TR is a third-generation N-Channel Power MOSFET from Vishay Siliconix, designed for fast switching and rugged performance. It has a drain-source voltage rating of 60V and a continuous drain current of 14A at 25°C case temperature. The maximum on-resistance is 100 mOhm at a gate-source voltage of 5V and drain current of 8.4A, enabling low conduction losses. The device features logic-level gate drive with specified Rds(on) at both 4V and 5V. Gate charge is 18 nC at 5V, and input capacitance is 870 pF at 25V drain-source voltage, supporting efficient switching. The MOSFET is rated for single-pulse avalanche energy of 53 mJ and has a peak diode recovery dV/dt of 4.5 V/ns. Operating junction temperature ranges from -55°C to 150°C. The part is offered in a surface-mount DPAK (TO-252) package, suitable for automated assembly. It is also available in tape and reel packaging.
The drain-source voltage (Vdss) is 60V.
The continuous drain current is 14A at TC=25°C.
The maximum on-resistance is 100 mOhm at ID=8.4A and VGS=5V.
The operating junction temperature range is -55°C to 150°C.
It is available in a surface-mount DPAK (TO-252) package.
RoHS status is reported as compliant but unverified.
The maximum gate charge is 18 nC at VGS=5V.