| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,745 pcs
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8745 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,297 pcs
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1297 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRLR024NPBF is an N-Channel enhancement mode power MOSFET from Infineon Technologies. It is designed with a drain-to-source voltage (Vdss) of 55V and a continuous drain current of 17A at Tc=25°C, with a pulsed capability of up to 72A. The device utilizes fifth-generation HEXFET technology to achieve a low maximum on-resistance of 65mOhm at Id=10A and Vgs=10V.
This MOSFET features logic-level gate drive, allowing it to be driven directly from low-voltage logic circuits. It is fully avalanche rated with a single pulse avalanche energy rating of 68mJ and repetitive avalanche energy of 4.5mJ. The device also provides a peak diode recovery dv/dt of 5.0 V/ns.
The part is packaged in a TO-252-3 (D-Pak) surface mount package, suitable for vapor phase, infrared, or wave soldering. The maximum power dissipation is 45W at Tc=25°C, and the operating junction temperature range is -55°C to 175°C. The gate threshold voltage is 2V maximum at Id=250µA.
55V.
17A continuous, with 72A pulsed.
TO-252-3, D-Pak (SC-63) surface mount package.
-55°C to 175°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified.