| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation |
The Infineon IRLR024N is a Fifth Generation HEXFET Power MOSFET that utilizes advanced processing techniques for low on-resistance per silicon area. This device is designed for efficiency and fast switching speeds, making it suitable for a wide variety of applications.
Key electrical characteristics include a maximum drain-source voltage (VDS) of 55V and a continuous drain current (ID) of 17A at 25°C. The on-resistance (RDS(on)) is specified at a low 0.065 Ohms when VGS is 10V. It also offers a pulsed drain current (IDM) of 72A and a power dissipation (PD) of 45W at 25°C.
The IRLR024N is housed in a D-Pak surface mount package, designed for use with vapor phase, infrared, or wave soldering techniques. The operating junction and storage temperature range is -55°C to +175°C. Thermal resistance values include Junction-to-Case (RθJC) of 3.3°C/W and Case-to-Ambient (RθJA) of 50°C/W (PCB mount).
The maximum drain-source voltage (VDS) for the IRLR024N is 55V.
The on-resistance (RDS(on)) of the IRLR024N is 0.065 Ohms when the gate-to-source voltage (VGS) is 10V.
The continuous drain current (ID) for the IRLR024N is 17A at 25°C and 12A at 100°C, both with VGS at 10V.
The IRLR024N is supplied in a D-Pak surface mount package.
The operating junction and storage temperature range for the IRLR024N is -55°C to +175°C.