| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
303 pcs
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303 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Gate Charge | |
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| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The IRLR024 is a third-generation N-Channel Power MOSFET designed by Infineon Technologies for applications requiring a balance of fast switching, rugged design, and cost-effectiveness. This MOSFET offers a drain-source voltage (Vds) of 60V and a low on-resistance (Rds(on)) of 0.1 Ohm specified at a gate-source voltage (Vgs) of 5V. It also features a gate charge (Qg) of 18nC (max).
Available in the DPAK (TO-252) package, the IRLR024 is designed for surface-mount applications using various soldering techniques. It supports tape and reel packaging for automated assembly. The device is suitable for power dissipation up to 42W at 25°C case temperature, or 2.5W when mounted on a 1" square PCB.
Key electrical characteristics include a continuous drain current of 14A at 25°C and 9.2A at 100°C (Vgs=5V), and a pulsed drain current of 56A. The operating junction and storage temperature range is -55°C to +150°C. The MOSFET also includes a dynamic dV/dt rating of 4.5 V/ns and a single pulse avalanche energy of 53 mJ.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) of the IRLR024 is 60V.
The on-resistance (Rds(on)) of the IRLR024 is 0.1 Ohm when the gate-source voltage (Vgs) is 5V.
The maximum continuous drain current (Id) for the IRLR024 is 14A at 25°C case temperature and 9.2A at 100°C case temperature, with Vgs at 5V.
The IRLR024 is available in the DPAK (TO-252) package, which is designed for surface mounting.
The operating junction and storage temperature range for the IRLR024 is -55°C to +150°C.