IRLMS6802TRPBF P-Channel MOSFET with 20V drain-source breakdown voltage and 5.6A continuous drain current. Features low on-resistance of 50mOhm at 4.5V gate drive.
Mfr Part #:

IRLMS6802TRPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
P-Channel MOSFET with 20V drain-source breakdown voltage and 5.6A continuous drain current. Features low on-resistance of 50mOhm at 4.5V gate drive.
✓ Total Stock: 16,020 pcs

IRLMS6802TRPBF Available from 1 distributor

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✓ Non-Authorised
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16,020 pcs
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IRLMS6802TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRLMS6802TRPBF Description

Short technical summary and product information.

The IRLMS6802TRPBF is a P-Channel MOSFET from Infineon Technologies, designed for efficient power management in battery and load management applications. It offers a drain-to-source breakdown voltage of -20V and a continuous drain current of -5.6A at 25°C, with a maximum on-resistance of 50mOhm at VGS = -4.5V. The device supports gate drive voltages of 2.5V and 4.5V, enabling flexible control in low-voltage circuits.

 

This MOSFET features a total gate charge of 16nC and input capacitance of 1079pF, contributing to fast switching performance. It can handle pulsed drain currents up to 45A and has a single pulse avalanche energy rating of 31mJ, providing robustness in demanding conditions. The device operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 2W at 25°C.

 

The IRLMS6802TRPBF is housed in a compact SOT-23-6 package (Micro6™/TSOP-6), which offers a smaller footprint compared to standard SOT-23 packages while providing improved thermal performance. It is surface-mountable and available in tape and reel packaging, suitable for automated assembly. The lead-free construction meets environmental standards, making it suitable for modern electronic designs.

IRLMS6802TRPBF Quick Information

Product Type: MOSFET
Series: HEXFET
Canonical Name: P-Channel MOSFET, 20V, 5.6A, SOT-23-6
Subcategory: Single MOSFET

IRLMS6802TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IRLMS6802TRPBF Features

  • P-Channel MOSFET with 20V breakdown voltage.
  • Low on-resistance of 50mOhm at 4.5V.
  • Supports 5.6A continuous drain current.
  • Compact SOT-23-6 surface mount package.
  • Lead-free and RoHS compliant construction.

IRLMS6802TRPBF Applications

  • Ideal for battery management and load switching.
  • Used in power management circuits.
  • Suitable for portable electronic devices.
  • Perfect for space-constrained PCB designs.

IRLMS6802TRPBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source breakdown voltage of the IRLMS6802TRPBF?

The drain-to-source breakdown voltage is -20V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 5.6A at VGS = -4.5V and TA = 25°C.

What is the on-resistance of this MOSFET?

The on-resistance is 50mOhm maximum at VGS = -4.5V and ID = -5.1A.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IRLMS6802TRPBF RoHS compliant?

Yes, the device is RoHS3 compliant and lead-free.

What package is the IRLMS6802TRPBF available in?

It is available in a SOT-23-6 package (Micro6™/TSOP-6) for surface mount.

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