IRLML6402TR The IRLML6402TR is a P-Channel MOSFET from Infineon Technologies, rated for 20V drain-source voltage and 3.7A continuous drain current. It features ultra-low on-resistance of 65mΩ and comes in a compact SOT-23 package.
Mfr Part #:

IRLML6402TR

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IRLML6402TR is a P-Channel MOSFET from Infineon Technologies, rated for 20V drain-source voltage and 3.7A continuous drain current. It features ultra-low on-resistance of 65mΩ and comes in a compact SOT-23 package.
✓ Total Stock: 678 pcs

IRLML6402TR Available from 1 distributor

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678 pcs
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IRLML6402TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

IRLML6402TR Description

Short technical summary and product information.

The IRLML6402TR is a P-Channel MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for battery and load management applications, offering a drain-source voltage of -20V and a continuous drain current of -3.7A at 25°C (with VGS = -4.5V). The device features an ultra-low on-resistance of 65mΩ (maximum) at ID = 3.7A and VGS = 4.5V, which minimizes conduction losses.

 

This MOSFET is housed in a Micro3™/SOT-23 package, which is a thermally enhanced large pad leadframe version of the standard SOT-23. The low profile (less than 1.1mm) makes it suitable for space-constrained applications such as portable electronics and PCMCIA cards. The package offers excellent thermal resistance and power dissipation, with a maximum power dissipation of 1.3W at 25°C and a junction-to-ambient thermal resistance of 75°C/W (typical).

 

The device supports fast switching and is available in tape and reel packaging. It has a gate threshold voltage of 1.2V (maximum) and a gate charge of 12nC at VGS = 5V, making it easy to drive. The input capacitance is 633pF at VDS = 10V. The body diode has a forward voltage of -1.2V and a reverse recovery time of 29ns (typical).

 

With a junction temperature range of -55°C to +150°C, the IRLML6402TR is suitable for a wide range of operating environments. It is RoHS3 compliant and has an MSL rating of 1 (unlimited). This MOSFET is ideal for load switching, battery management, and power management in portable devices.

IRLML6402TR Quick Information

Product Type: P-Channel MOSFET
Canonical Name: P-Channel MOSFET, 20V, 3.7A, SOT-23
Subcategory: Single P-Channel MOSFET

IRLML6402TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRLML6402TR Features

  • Ultra-low on-resistance of 65mΩ.
  • Rated for 20V drain-source voltage.
  • Continuous drain current of 3.7A.
  • Low profile SOT-23 package.
  • Fast switching HEXFET technology.

IRLML6402TR Applications

  • Battery management in portable electronics.
  • Load switching in power management circuits.
  • Ideal for space-constrained PCB designs.
  • Used in PCMCIA card applications.

IRLML6402TR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRLML6402TR?

The maximum drain-source voltage is -20V.

What is the continuous drain current rating at 25°C?

The continuous drain current is -3.7A at TA = 25°C with VGS = -4.5V.

What is the on-resistance of the IRLML6402TR?

The maximum on-resistance is 65mΩ at ID = 3.7A and VGS = 4.5V.

What is the operating temperature range?

The junction temperature range is -55°C to +150°C.

Is the IRLML6402TR RoHS compliant?

Yes, it is RoHS3 compliant.

What package is the IRLML6402TR available in?

It is available in a Micro3™/SOT-23 surface mount package.

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