IRLML6401TRPBF The Infineon Technologies IRLML6401TRPBF is a P-Channel MOSFET with a drain-to-source voltage of -12V and a continuous drain current of -4.3A. It is supplied in a SOT-23 package.
Mfr Part #:

IRLML6401TRPBF

Available from 4 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IRLML6401TRPBF is a P-Channel MOSFET with a drain-to-source voltage of -12V and a continuous drain current of -4.3A. It is supplied in a SOT-23 package.
✓ Total Stock: 23,420 pcs

IRLML6401TRPBF Available from 4 distributors

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✓ Non-Authorised

IRLML6401TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRLML6401TRPBF Description

Short technical summary and product information.

The Infineon Technologies IRLML6401TRPBF is a P-Channel MOSFET designed for efficient power management applications. It features a maximum drain-to-source voltage (Vdss) of -12V and a continuous drain current of -4.3A at 25°C, with a pulsed drain current of -34A.

 

This MOSFET offers a low on-resistance of 50mOhm at an Id of 4.3A and Vgs of 4.5V, with a gate-to-source voltage range of ±8V. The device operates within a junction and storage temperature range of -55°C to +150°C.

 

Packaged in a compact SOT-23 (Micro3™) surface-mount package, the IRLML6401TRPBF is suitable for space-constrained designs. Its low profile and small footprint make it ideal for portable electronics and PCMCIA cards. The device is RoHS compliant and Halogen-Free.

 

Key electrical specifications include an input capacitance (Ciss) of 830pF at 10V and a gate charge (Qg) of 15nC at 5V. The gate threshold voltage (Vgs(th)) is a maximum of 950mV at 250µA.

IRLML6401TRPBF Quick Information

Product Type: MOSFET
Series: Micro3
Canonical Name: Infineon Technologies IRLML6401TRPBF P-Channel MOSFET
Subcategory: P-Channel

IRLML6401TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRLML6401TRPBF Features

  • P-Channel MOSFET with -12V Vdss.
  • Continuous drain current of -4.3A.
  • Low Rds On: 50mOhm maximum.
  • Compact SOT-23 (Micro3) package.
  • RoHS Compliant and Halogen-Free.

IRLML6401TRPBF Applications

  • Ideal for battery management.
  • Suitable for load switching.
  • Used in portable electronics.
  • Space-constrained designs.

IRLML6401TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the IRLML6401TRPBF?

The maximum drain-to-source voltage (Vdss) is -12V.

What is the continuous drain current at 25°C for the IRLML6401TRPBF?

The continuous drain current at 25°C is -4.3A.

What is the package type for the IRLML6401TRPBF?

The IRLML6401TRPBF is supplied in a SOT-23 package, also referred to as TO-236-3 or SC-59.

What is the operating temperature range for the IRLML6401TRPBF?

The operating temperature range is -55°C to +150°C.

Is the IRLML6401TRPBF RoHS compliant?

Yes, the IRLML6401TRPBF is RoHS compliant.

What is the maximum Rds On for the IRLML6401TRPBF?

The maximum Rds On is 50mOhm at an Id of 4.3A and Vgs of 4.5V.

What is the gate-to-source voltage range for this MOSFET?

The gate-to-source voltage (Vgs) range is ±8.0V.

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