| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,776 pcs
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2776 pcs | On Request | 1 | On Request | On Request | 445 | On Request | On Request | |
|
70 pcs
|
70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
IRLML6401TR is a P-Channel MOSFET manufactured by Infineon Technologies. It is housed in a compact surface-mount SOT-23 package (also known as TO-236-3 or SC-59). The device supports a maximum drain-to-source voltage of 12V and a continuous drain current of 4.3A at ambient temperature. With a maximum on-resistance of 50mOhm at a gate-to-source voltage of 4.5V, it provides low conduction losses for power switching applications.
The MOSFET features a gate threshold voltage up to 950mV (at 250µA drain current), enabling control with low-voltage logic signals. Total gate charge is limited to 15nC at 5V gate drive, and input capacitance is 830pF at 10V drain-source voltage, giving engineers a clear basis for estimating switching performance.
This P-Channel device is suited for high-side load switching and power management in portable battery-operated equipment. The SOT-23 footprint helps conserve board space, and the surface-mount design simplifies automated assembly.
P-Channel.
12V.
4.3A at ambient temperature.
50mOhm at a drain current of 4.3A and gate-to-source voltage of 4.5V.
Maximum 950mV at a drain current of 250µA.
Surface-mount SOT-23 (TO-236-3, SC-59) package.
RoHS3 compliant.