| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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| Tape & Reel |
The IRLML6302TRPBF is a single P-channel Power MOSFET from Infineon, utilizing Generation V technology. It is designed for efficient and reliable operation with extremely low ON-resistance per silicon area, fast switching speeds, and a ruggedized device design.
Key electrical characteristics include a 20V drain-to-source voltage (Vds) and a continuous drain current (Ids) of 0.78A. The ON-resistance (Rds) is specified at 0.6 Ohms. It has a power dissipation of 400mW and a maximum power dissipation of 540mW. Input capacitance (Ciss) is 97pF at 15V Vds.
This MOSFET operates within a temperature range of -55°C to 150°C. It features a low profile, less than 1.1mm, making it suitable for space-constrained applications. The device is packaged in a SOT-23 surface mount case and is supplied on tape and reel.
Additional features include dynamic dV/dt rating and full avalanche rating. The IRLML6302TRPBF is designed for applications requiring efficient power switching and low ON-resistance.
The drain-source voltage (Vds) for the IRLML6302TRPBF is 20V.
The continuous drain current (Ids) for the IRLML6302TRPBF is 0.78A.
The ON-resistance (Rds) for the IRLML6302TRPBF is 0.6 Ohms.
The operating temperature range for the IRLML6302TRPBF is -55°C to 150°C.
The IRLML6302TRPBF is supplied in a SOT-23 package.
The IRLML6302TRPBF is supplied on tape and reel.