IRLML6302TRPBF P-Channel MOSFET from Infineon Technologies, rated for 20V drain-source voltage and 780mA continuous drain current. Features low on-resistance of 600mOhm at 4.5V drive.
Mfr Part #:

IRLML6302TRPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
P-Channel MOSFET from Infineon Technologies, rated for 20V drain-source voltage and 780mA continuous drain current. Features low on-resistance of 600mOhm at 4.5V drive.
✓ Total Stock: 230,100 pcs
$ Price Range: $0.57

IRLML6302TRPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
180,100 pcs
180100 pcs On Request 1 On Request On Request 17+ On Request On Request
Non-Authorised Inventory information
50,000 pcs
50000 pcs On Request 1 On Request On Request On Request On Request On Request

IRLML6302TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRLML6302TRPBF Description

Short technical summary and product information.

The IRLML6302TRPBF is a P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It is designed for low-voltage switching applications requiring efficient power management.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 780mA at ambient temperature. The device features a maximum on-resistance (Rds(on)) of 600mOhm at a gate drive of 4.5V and 610mA drain current. Gate threshold voltage is 1.5V maximum at 250µA, and the recommended drive voltage range is 2.7V to 4.5V. Input capacitance is 97pF at 15V Vds, and total gate charge is 3.6nC at 4.45V Vgs, enabling moderate switching speeds.

 

The MOSFET is housed in a compact SOT-23-3 surface-mount package (Micro3™/SOT-23), suitable for space-constrained designs. Maximum power dissipation is 540mW at ambient temperature. The device operates over a junction temperature range of -55°C to 150°C.

 

Typical applications include load switching, battery protection circuits, and power management in portable electronics. The part is RoHS3 compliant and REACH unaffected, though compliance is unverified.

IRLML6302TRPBF Quick Information

Product Type: P-Channel MOSFET
Canonical Name: P-Channel MOSFET, 20V Vdss, 780mA Id, SOT-23-3
Subcategory: Single MOSFET

IRLML6302TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected

IRLML6302TRPBF Estimated Pricing

Qty Low High
1+ $0.57 $0.57

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRLML6302TRPBF Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current rating of 780mA.
  • Low on-resistance of 600mOhm at 4.5V.
  • Compact SOT-23-3 surface-mount package.
  • Wide operating temperature range -55°C to 150°C.

IRLML6302TRPBF Applications

  • Load switching in battery-powered devices.
  • Power management for portable electronics.
  • DC-DC converter output switching.

IRLML6302TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

20V.

What is the package type?

SOT-23-3 (Micro3™/SOT-23).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the IRLML6302TRPBF RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified.

What is the continuous drain current rating?

780mA at ambient temperature.

What is the on-resistance at 4.5V gate drive?

600mOhm maximum at 610mA.

What is the gate threshold voltage?

1.5V maximum at 250µA.

Home
Account

Categories