| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,956 pcs
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2956 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vgs(th) (Max) @ Id |
The Infineon IRLML5103TR is a P-Channel enhancement mode MOSFET designed for low power switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 760mA at ambient temperature. The device offers a low on-resistance of 600mOhm maximum at 600mA and 10V gate drive, with a threshold voltage of 1V maximum at 250µA. Gate charge is 5.1nC at 10V, and input capacitance is 75pF at 25V.
This MOSFET is housed in a compact SOT-23 surface mount package, also known as Micro3™ or TO-236-3, making it suitable for space-constrained designs. It is specified for operation at ambient temperature. The device is claimed to be RoHS3 compliant and REACH unaffected, with MSL level 1 (unlimited).
Typical applications include load switching, power management in portable devices, and DC-DC converter circuits. The low gate charge and capacitance enable efficient switching at moderate frequencies.
The maximum drain-source voltage is 30V.
The device is available in SOT-23 (TO-236-3, SC-59) surface mount package.
The device is claimed to be RoHS3 compliant (unverified).
Maximum gate charge is 5.1nC at Vgs=10V.
Maximum on-resistance is 600mOhm at 600mA and 10V gate drive.
Maximum threshold voltage is 1V at 250µA drain current.