| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
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| Tape & Reel |
The IRLML2803PBF is an N-Channel HEXFET Power MOSFET from International Rectifier, designed for high efficiency and reliability in space-constrained applications. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, combined with fast switching speeds.
Key electrical specifications include a Drain-to-Source Breakdown Voltage of 30V and a typical Static Drain-to-Source On-Resistance of 0.25Ω at VGS = 10V and ID = 0.91A. The Gate Threshold Voltage is 1V. The MOSFET is rated for a continuous drain current of 3.9A at 25°C ambient temperature.
Packaged in the industry's smallest footprint, the SOT-23 Micro3 package, this MOSFET is ideal for applications where printed circuit board space is at a premium. Its low profile of less than 1.1mm allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The device is available in tape and reel packaging.
This MOSFET is lead-free and RoHS compliant, making it suitable for modern electronic designs prioritizing environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Breakdown Voltage is 30V.
The typical Static Drain-to-Source On-Resistance is 0.25Ω at VGS = 10V and ID = 0.91A.
The IRLML2803PBF is supplied in a SOT-23 Micro3 package.
The Junction and Storage Temperature Range is -55 to +150°C.
The IRLML2803PBF is RoHS3 Compliant.