| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
The IRLM220ATF is an N-Channel MOSFET from ON Semiconductor designed for medium-voltage switching applications. It features a maximum drain-source voltage of 200V and a continuous drain current of 1.13A at ambient temperature. The device offers a maximum on-resistance of 800mOhm at a gate drive voltage of 5V and 570mA drain current.
This MOSFET utilizes metal-oxide semiconductor technology and is suitable for low-power switching circuits. It has a maximum gate charge of 15nC at 5V and input capacitance of 430pF at 25V drain-source voltage. The device can dissipate up to 2W at case temperature.
The IRLM220ATF is housed in a surface-mount SOT-223-4 package (TO-261-4 equivalent), making it suitable for compact PCB designs. It operates over a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
200V.
SOT-223-4 (TO-261-4, TO-261AA).
-55°C to 150°C (junction).
Yes, RoHS3 compliant (unverified).
1.13A at ambient temperature.
800mOhm maximum at Id=570mA, Vgs=5V.
15nC maximum at Vgs=5V.