| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
342 pcs
|
342 pcs | On Request | 1 | On Request | On Request | 1115+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLM110ATF is an N-Channel power MOSFET manufactured by On Semiconductor. It has a drain-to-source voltage rating of 100V and a continuous drain current rating of 1.5A at a case temperature of 25°C, with a pulsed drain current capability of 12A. The device features a maximum drain-source on-state resistance of 0.44Ω at Vgs=5V and Id=750mA, with a typical value of 0.336Ω.
Designed for surface-mount assembly, the device is supplied in a TO-261-4 / SOT-223-4 package. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.2W at 25°C. Thermal resistance from junction to ambient is 300°C/W when mounted on the minimum recommended PCB pad size.
The MOSFET includes avalanche rugged technology and is rated for a single pulsed avalanche energy of 12mJ. It offers a total gate charge of 8nC and input capacitance of 235pF, supporting efficient power switching in low-power circuits. Typical applications include DC-DC converter power stages and general load switching functions.
| Qty | Low | High |
|---|---|---|
| 4,000+ | $0.21 | $0.21 |
| 8,000+ | $0.20 | $0.20 |
| 12,000+ | $0.19 | $0.19 |
| 20,000+ | $0.18 | $0.18 |
| 28,000+ | $0.18 | $0.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRLM110ATF has a maximum drain-to-source voltage rating of 100V.
The IRLM110ATF is supplied in a surface-mount TO-261-4 / SOT-223-4 package.
The IRLM110ATF operates over a junction temperature range of -55°C to 150°C.
The IRLM110ATF is listed as RoHS3 Compliant in existing product data, though the compliance status is unverified.
The maximum continuous drain current is 1.5A at Tc=25°C, with a pulsed drain current limit of 12A.
The maximum on-state resistance is 440mΩ at Vgs=5V and Id=750mA; typical value is 336mΩ.
The total gate charge is 8nC at Vgs=5V.