IRLL3303PBF IRLL3303PBF is a surface-mount N-Channel power MOSFET from Infineon. It offers 30V drain-source breakdown, 4.6A continuous drain current, and 31mΩ max on-resistance at 10V.
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IRLL3303PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRLL3303PBF is a surface-mount N-Channel power MOSFET from Infineon. It offers 30V drain-source breakdown, 4.6A continuous drain current, and 31mΩ max on-resistance at 10V.
✓ Total Stock: 20 pcs

IRLL3303PBF Available from 1 distributor

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IRLL3303PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRLL3303PBF Description

Short technical summary and product information.

The IRLL3303PBF is an N-Channel power MOSFET manufactured by Infineon Technologies (formerly International Rectifier). This HEXFET device provides a drain-source breakdown voltage of 30V and supports a continuous drain current of 4.6A at 25°C when mounted on a PCB. It is designed for surface-mount assembly in the SOT-223 package (TO-261-4, TO-261AA).

 

Key electrical specifications include a maximum drain-source on-resistance of 31mΩ at VGS=10V and 4.6A, and 45mΩ at VGS=4.5V and 2.3A. The device features logic-level gate drive (4.5V/10V), a total gate charge of 50nC at 10V, and input capacitance of 840pF at 25V. It can handle pulsed drain currents up to 37A and single-pulse avalanche energy of 140mJ.

 

Designed for fast switching and low on-resistance, the IRLL3303PBF suits power management and load switching in space-constrained boards. Its SOT-223 package includes an enlarged tab for improved thermal performance; power dissipation is rated at 1W at 25°C (PCB mount) with a junction-to-ambient thermal resistance of 120°C/W maximum. The device operates over a junction temperature range of -55°C to 150°C.

 

The part is marked lead-free (PbF) in the datasheet and is listed as RoHS3 compliant, with moisture sensitivity level of 1 (unlimited).

IRLL3303PBF Quick Information

Product Type: Power MOSFET
Series: HEXFET
Canonical Name: N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IRLL3303PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IRLL3303PBF Features

  • Ultra-low on-resistance for high efficiency.
  • Logic-level gate drive for 5V control.
  • SOT-223 package with enlarged thermal tab.
  • Rated for 30V drain-source breakdown.
  • Supports pulsed drain current up to 37A.

IRLL3303PBF Applications

  • Suitable for low-voltage load switching circuits.
  • Use in DC-DC converter output switching.
  • For power management in compact PCBs.
  • Works with 5V logic-level gate drive.

IRLL3303PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IRLL3303PBF?

The minimum drain-source breakdown voltage is 30V.

What gate-source voltage can the IRLL3303PBF handle?

The gate-source voltage rating is ±16V.

What is the maximum continuous drain current?

4.6A at TA=25°C with VGS=10V, PCB mount.

What is the on-resistance of this MOSFET?

Maximum 31mΩ at VGS=10V and ID=4.6A; maximum 45mΩ at VGS=4.5V and ID=2.3A.

What package is the IRLL3303PBF offered in?

Surface-mount SOT-223 (TO-261-4, TO-261AA) package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the IRLL3303PBF RoHS compliant?

The product is listed as RoHS3 compliant; the datasheet also marks it lead-free (PbF).

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